NST847BDP6T5G ON Semiconductor, NST847BDP6T5G Datasheet - Page 2

• Manufacturer Part Number: NST847BDP6T5G
• Description: TRANSISTOR NPN DUAL 45V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST847BDP6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 420 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NST847BDP6T5G; NST847BDP6T5GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain (I
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Input Capacitance (V
Noise Figure
(I
(I
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
C
C
0.0001
= 10 mA, V
= 0.2 mA, V
Figure 1. Collector Emitter Saturation Voltage vs.
I
C
/I
B
= 10
CE
CE
C
I
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, R
C
= 2.0 mA, V
EB
, COLLECTOR CURRENT (A)
(I
CB
(V
C
C
= 0.5 V, f = 1.0 MHz)
Collector Current
0.001
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
CE
S
(I
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
C
C
= 5.0 V)
E
= 10 mA, I
= 100 mA, I
(I
CE
C
= 1.0 mA)
CE
A
C
C
C
C
= 10 mA)
= 150°C)
25°C
= 5.0 V)
(T
= 10 mA, I
= 100 mA, I
= 5.0 V)
V
= 10 mA)
= 10 mA, V
CE(sat)
A
= 25°C unless otherwise noted)
0.01
B
B
= 0.5 mA)
= 150°C
−55°C
= 5.0 mA)
B
EB
B
= 0.5 mA)
= 5.0 mA)
= 0)
http://onsemi.com
0.1
2
600
500
400
300
200
100
0.0001
0
Figure 2. DC Current Gain vs. Collector Current
150°C (5.0 V)
150°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
BE(on)
C
CBO
h
NF
f
obo
FE
ibo
T
I
C
, COLLECTOR CURRENT (A)
0.001
Min
200
580
100
6.0
45
50
50
−
−
−
−
−
−
−
−
−
−
Typ
290
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
0.01
Max
0.25
450
700
770
5.0
0.6
4.5
15
10
10
−
−
−
−
−
−
−
Unit
MHz
mV
nA
mA
dB
pF
pF
V
V
V
V
V
V
−
0.1