HBDM60V600W-7 Diodes Inc, HBDM60V600W-7 Datasheet - Page 5

• Manufacturer Part Number: HBDM60V600W-7
• Description: TRANS ARRAY NPN/PNP DUAL SOT-363
• Manufacturer: Diodes Inc

Specifications of HBDM60V600W-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA, 600mA
• Voltage - Collector Emitter Breakdown (max): 65V, 60V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HBDM60V600WDITR

Current Schematic along with Application Example:
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
0.9
0.8
0.6
0.4
0.2
1.0
0.7
0.5
0.3
0.1
Fig. 12 Typical Base Emitter Voltage vs. Collector Current
Note:
0.1
F o r w a r d
R 5
1 k
D1, D2, D3, D4: Switching Diodes (MMBD4448)
Q3, Q4: NPN Transistors (MMBTA06)
I , COLLECTOR CURRENT (mA)
Q 3
C
R 3
H a l f H - B r i d g e
H B D M 6 0 V 6 0 0 W
1
M M B T 2 9 0 7 A
B Q 1
M M B T A 0 6
B Q 2
10
Q 1
C Q 1
C Q 2
Q 2
D 3
D 1
100
E Q 1
R 1
9 V - 1 2 V
M o t o r
E Q 2
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C 2
0
3 6
0
C 1
5 of 7
1,000
D 4
H B D M 6 0 V 6 0 0 W
D 2
100
Fig. 13 Typical Gain Bandwidth Product vs. Collector Current
10
1
1
Q 2
Q 1
C Q 2
C Q 1
M M B T 2 9 0 7 A
M M B T A 0 6
H a l f H - B r i d g e
I , COLLECTOR CURRENT (mA)
C
B Q 2
B Q 1
R 4
Q 4
HBDM60V600W
R e v e r s e
R 8
1 k
© Diodes Incorporated
10
July 2008