HBDM60V600W-7 Diodes Inc, HBDM60V600W-7 Datasheet - Page 2

• Manufacturer Part Number: HBDM60V600W-7
• Description: TRANS ARRAY NPN/PNP DUAL SOT-363
• Manufacturer: Diodes Inc

Specifications of HBDM60V600W-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA, 600mA
• Voltage - Collector Emitter Breakdown (max): 65V, 60V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HBDM60V600WDITR

Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1)
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2)
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
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I
I
BE(ON)
I
h
CBO
CES
EBO
f
V
V
V
FE
V
V
T
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
h
CBO
CEX
I
t
t
f
t
BL
on
off
t
FE
t
t
T
d
s
r
r
2 of 7
Min
250
100
100
0.7
80
65
⎯
⎯
⎯
⎯
⎯
6
Min
-5.5
100
100
100
100
100
-60
-60
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.75
Typ
0.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.95
Max
-0.3
-0.5
-1.3
300
100
-10
-50
-50
45
10
40
80
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
@T
Max
0.95
100
100
100
0.4
0.8
⎯
⎯
⎯
⎯
⎯
⎯
@T
A
Unit
MHz
= 25°C unless otherwise specified
nA
nA
nA
ns
ns
ns
ns
ns
ns
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
A
= 25°C unless otherwise specified
MHz
Unit
nA
nA
nA
⎯
⎯
V
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
V
f = 100MHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
B1
CB
CE
CE
CE
CE
CC
= -10μA, I
= -150mA, I
= -500mA, I
= -10μA, I
= -10mA, I
= -100μA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -150mA, I
= -500mA, I
= -15mA
= I
= -30V, V
= -30V, V
= -50V, I
= -2.0V, I
= -30V, I
= -6.0V, I
I
I
I
V
V
V
V
V
I
V
I
V
f = 100MHz
B2
C
C
E
C
C
CB
CE
EB
CE
CE
CE
CE
= 100μA, I
= 100mA, I
= 100μA, I
= 1mA, I
= 100mA, I
= -15mA
= 90V, V
= 1V, I
= 80V, I
= 5V, I
= 1V, I
= 1V, I
= 20V, I
Test Condition
HBDM60V600W
E
C
B
E
C
C
EB(OFF)
EB(OFF)
C
= 0
= 0
B
B
B
B
Test Condition
= 0
= 0
= -150mA,
CE
CE
CE
CE
CE
= -10mA,
= -150mA,
= -15mA
= -50mA
= -15mA
= -50mA
B
C
C
C
C
= -10V
= -10V
= -10V
= -10V
= -10V
E
C
= 0
E
C
= 0
= 100mA
BE
= 10mA
= 100mA
B
B
= 0
= 10mA,
= 0
= 0
= 10mA
= 5mA
= -0.5V
= -0.5V
= 0
© Diodes Incorporated
July 2008