HBDM60V600W-7 Diodes Inc, HBDM60V600W-7 Datasheet - Page 3

• Manufacturer Part Number: HBDM60V600W-7
• Description: TRANS ARRAY NPN/PNP DUAL SOT-363
• Manufacturer: Diodes Inc

Specifications of HBDM60V600W-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA, 600mA
• Voltage - Collector Emitter Breakdown (max): 65V, 60V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HBDM60V600WDITR

Typical Characteristics
PNP (MMBT2907A) Transistor (Q1) Plots:
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
0.5
0.4
0.6
0.3
0.2
0.1
200
150
100
50
5.0
1.0
0
30
10
20
0
1
0.1
0
I
I
C
B
= 10
25
-I , COLLECTOR CURRENT (mA)
C
T , AMBIENT TEMPERATURE (°C)
A
50
Fig. 1 Power Derating Curve
Fig. 2 Typical Capacitance
REVERSE VOLTAGE (V)
10
1.0
75
T = 25°C
A
100 125
@T
T = 150°C
A
A
100
= 25°C unless otherwise specified
10
Cibo
150
T = -50°C
A
175
Cobo
1,000
200
30
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1,000
100
1.6
1.4
1.2
1.0
0.6
0.8
0.4
0.2
10
0.001
0
1
1
Fig. 5 Typical DC Current Gain vs. Collector Current
V
CE
I = 1mA
C
= 5V
Fig. 3 Typical Collector Saturation Region
0.01
-I , COLLECTOR CURRENT (mA)
C
-I , BASE CURRENT (mA)
I = 10mA
C
B
T = 25°C
10
A
0.1
I = 30mA
C
T = 150°C
A
I = 100mA
C
1
100
HBDM60V600W
T = -50°C
I = 300mA
C
A
10
© Diodes Incorporated
1,000
100
July 2008