MCR8DSMT4G ON Semiconductor, MCR8DSMT4G Datasheet - Page 3

• Manufacturer Part Number: MCR8DSMT4G
• Description: THYRISTOR SCR 8A 600V DPAK
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR8DSMT4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 5.1A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 90A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Gate Trigger Current Max, Igt: 12µA
• Current It Av: 8A
• On State Rms Current It(rms): 8A
• Peak Non Rep Surge Current Itsm 50hz: 90A
• Holding Current Max Ih: 6mA
• Rohs Compliant: Yes
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Average On-state Current: 5.1A
• Hold Current: 6mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 1V
• Peak Reverse Gate Voltage: 18V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 90A
• On State Voltage(max): 1.8@16AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

105
100
110
Symbol
V
I
V
I
V
I
95
90
85
DRM
RRM
H
DRM
RRM
TM
0
Figure 1. Average Current Derating
1.0
I
T(AV)
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
a = 30°
, AVERAGE ON-STATE CURRENT (AMPS)
2.0
3.0
60°
Voltage Current Characteristic of SCR
90°
4.0
a = Conduction
120°
Angle
5.0
a
180°
http://onsemi.com
dc
6.0
3
I
Reverse Avalanche Region
RRM
Anode −
Reverse Blocking Region
at V
8.0
6.0
4.0
2.0
12
10
0
0
RRM
(off state)
a = Conduction
Figure 2. On−State Power Dissipation
Angle
1.0
I
T(AV)
on state
a
a = 30°
, AVERAGE ON-STATE CURRENT (AMPS)
+ Current
2.0
60°
Forward Blocking Region
I
H
3.0
V
TM
(off state)
90°
I
DRM
4.0
120°
Anode +
at V
DRM
5.0
+ Voltage
180°
dc
6.0