MCR8DSMT4G ON Semiconductor, MCR8DSMT4G Datasheet - Page 2

• Manufacturer Part Number: MCR8DSMT4G
• Description: THYRISTOR SCR 8A 600V DPAK
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR8DSMT4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 5.1A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 90A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Gate Trigger Current Max, Igt: 12µA
• Current It Av: 8A
• On State Rms Current It(rms): 8A
• Peak Non Rep Surge Current Itsm 50hz: 90A
• Holding Current Max Ih: 6mA
• Rohs Compliant: Yes
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Average On-state Current: 5.1A
• Hold Current: 6mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 1V
• Peak Reverse Gate Voltage: 18V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 90A
• On State Voltage(max): 1.8@16AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
5. R
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR8DSMT4
MCR8DSMT4G
MCR8DSNT4
MCR8DSNT4G
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Reverse Gate Blocking Voltage (I
Peak Reverse Gate Blocking Current (V
Peak Forward On−State Voltage (Note 4) (I
Gate Trigger Current (Continuous dc) (Note 5)
Gate Trigger Voltage (Continuous dc) (Note 5)
Holding Current
Latching Current
Total Turn−On Time
Critical Rate of Rise of Off−State Voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(V
(V
(V
(V
(V
(Source Voltage = 12 V, R
(V
(V
R
GK
GK
AK
D
D
D
D
D
D
current not included in measurements.
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, R
= 12 V, I
= Rated V
= 0.67 X Rated V
= 1.0 kW, T
= Rated V
G
L
L
DRM
= 2.0 mA, R
= 100 W)
= 100 W)
DRM
J
= 110°C)
Device
, Rise Time = 20 ns, Pulse Width = 10 ms)
or V
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
DRM
RRM
, Exponential Waveform,
S
GK
= 6.0 kW, I
; R
= 1 kW)
Characteristics
Characteristic
GK
= 1.0 kW) (Note 3)
GR
GR
(T
T
J
= 16 A(pk), R
= 10 mA)
TM
= 10 V)
= 25°C unless otherwise noted)
GK
GK
= 16 A)
= 1 kW)
= 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
GK
http://onsemi.com
= 1.0 kW)
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
Symbol
Symbol
V
R
I
I
I
dv/dt
R
R
V
V
DRM
RRM
RGM
I
GRM
tgt
T
GT
I
qJC
qJA
qJA
I
TM
GT
H
L
L
0.45
2500 / Tape & Reel
Min
5.0
0.2
0.5
0.5
2.0
10
−
−
−
−
−
−
−
−
−
Shipping
Max
12.5
0.65
260
Typ
2.2
1.4
1.0
1.0
2.0
88
80
12
10
−
−
−
−
−
−
−
−
†
Max
500
200
300
1.2
1.8
1.0
1.5
6.0
6.0
5.0
10
18
10
10
−
−
°C/W
V/ms
Unit
Unit
mA
mA
°C
mA
mA
mA
ms
V
V
V