MCR8DSMT4G ON Semiconductor, MCR8DSMT4G Datasheet

THYRISTOR SCR 8A 600V DPAK

MCR8DSMT4G

Manufacturer Part Number
MCR8DSMT4G
Description
THYRISTOR SCR 8A 600V DPAK
Manufacturer
ON Semiconductor
Type
SCRr
Datasheet

Specifications of MCR8DSMT4G

Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1V
Voltage - On State (vtm) (max)
1.8V
Current - On State (it (av)) (max)
5.1A
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
90A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current - On State (it (rms) (max)
8A
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
12µA
Current It Av
8A
On State Rms Current It(rms)
8A
Peak Non Rep Surge Current Itsm 50hz
90A
Holding Current Max Ih
6mA
Rohs Compliant
Yes
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Average On-state Current
5.1A
Hold Current
6mA
Gate Trigger Current (max)
200uA
Gate Trigger Voltage (max)
1V
Peak Reverse Gate Voltage
18V
Package Type
DPAK
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
90A
On State Voltage(max)
1.8@16AV
Mounting
Surface Mount
Pin Count
2 +Tab
Operating Temp Range
-40C to 110C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR8DSMT4G
Manufacturer:
ON Semiconductor
Quantity:
5
Part Number:
MCR8DSMT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MCR8DSMT4G
Manufacturer:
ON/安森美
Quantity:
20 000
MCR8DSM, MCR8DSN
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 7
Peak Repetitive Off−State Voltage (Note 1)
(T
60 Hz)
On−State RMS Current
(180° Conduction Angles; T
Average On−State Current
(180° Conduction Angles; T
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width ≤ 10 msec, T
Forward Average Gate Power
(t = 8.3 msec, T
Forward Peak Gate Current
(Pulse Width ≤ 10 msec, T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Surface Mount Lead Form − Case 369C
Miniature Plastic Package − Straight Leads − Case 369
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
apply for negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
J
DRM
= −40 to 110°C, Sine Wave, 50 Hz to
and V
RRM
C
= 90°C)
Rating
for all types can be applied on a continuous basis. Ratings
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
(T
C
C
J
= 25°C unless otherwise noted)
C
C
= 90°C)
= 90°C)
Preferred Device
= 90°C)
= 90°C)
J
MCR8DSM
MCR8DSN
= 110°C)
Symbol
I
P
V
V
T(RMS)
I
I
P
T(AV)
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
stg
2
J
t
−40 to 150
−40 to 110
Value
600
800
8.0
5.1
5.0
0.5
2.0
90
34
1
A
Unit
2
°C
°C
W
W
V
A
A
A
A
sec
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
3
1
2
3
4
ORDERING INFORMATION
Y
WW
CR8DSx = Device Code
G
4
8 AMPERES RMS
600 − 800 VOLTS
A
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
STYLE 4
DPAK
= Year
= Work Week
= Pb−Free Package
SCRs
x= M or N
Publication Order Number:
Cathode
Anode
Anode
Gate
G
MARKING
DIAGRAM
K
MCR8DSM/D
YWW
CR
8DSxG

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MCR8DSMT4G Summary of contents

Page 1

MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die ...

Page 2

... Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2 current not included in measurements. GK ORDERING INFORMATION Device MCR8DSMT4 MCR8DSMT4G MCR8DSNT4 MCR8DSNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off−State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off−State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On−State Voltage TM I Holding ...

Page 4

TYPICAL @ T = 25°C J MAXIMUM @ T 10 MAXIMUM @ T = 25°C J 1.0 0.1 0 1.0 2.0 3 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics 1000 100 GATE OPEN 10 1.0 ...

Page 5

100 1000 R , GATE-CATHODE RESISTANCE (OHMS) GK Figure 9. Holding Current versus Gate−Cathode Resistance 1000 400 V 100 600 800 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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