BT151-800R,127 NXP Semiconductors, BT151-800R,127 Datasheet - Page 3
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BT151-800R,127
Manufacturer Part Number
BT151-800R,127
Description
THYRISTOR 12A 800V TO220AB
Manufacturer
NXP Semiconductors
Specifications of BT151-800R,127
Package / Case
TO-220AB-3
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 132A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
12A
Breakover Current Ibo Max
132 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3675-5
933387740127
BT151-800R
933387740127
BT151-800R
NXP Semiconductors
BT151_SER_L_R_4
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/I
T(AV)
2
10
Rev. 04 — 23 October 2006
4
4
2.8
BT151 series L and R
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV)
t
p
(A)
© NXP B.V. 2006. All rights reserved.
001aaa958
001aaa957
I
1.57
a =
TSM
t
Thyristors
10
8
3
105.5
T
112
118.5
125
mb(max)
( C)
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