BT151-650R,127 NXP Semiconductors, BT151-650R,127 Datasheet - Page 5

• Manufacturer Part Number: BT151-650R,127
• Description: THYRISTOR 12A 650V TO220AB
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of BT151-650R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 650V
• Off-state Voltage: 650V
• Average On-state Current: 7.5A
• Hold Current: 20mA
• Gate Trigger Current (max): 15mA
• Gate Trigger Voltage (max): 1.5V
• Peak Reverse Gate Voltage: 5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 132A
• On State Voltage(max): 1.75@23AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3674-5; 933387730127; BT151-650R

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT151-650R_5
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
th(j-mb)
(K/W)
I
TSM
(A)
10
10
10
160
120
80
40
10
0
1
1
2
3
10
values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Transient thermal impedance from junction to mounting base as a function of pulse width
1
5
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient free
air
10
4
Conditions
see
Figure 6
10
10
3
Rev. 05 — 27 February 2009
10
2
10
10
2
1
SCR, 12 A, 15mA, 650 V, SOT78
Min
-
-
number of cycles
P
BT151-650R
1
T
I
T
j
initial = 25 C max
Typ
-
60
t
p
t
T
p
t
p
© NXP B.V. 2009. All rights reserved.
(s)
003aab829
001aaa962
=
Max
1.3
-
I
TSM
t
T
t
p
t
10
10
3
Unit
K/W
K/W
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