BT151-650R,127 NXP Semiconductors, BT151-650R,127 Datasheet - Page 2

• Manufacturer Part Number: BT151-650R,127
• Description: THYRISTOR 12A 650V TO220AB
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of BT151-650R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 650V
• Off-state Voltage: 650V
• Average On-state Current: 7.5A
• Hold Current: 20mA
• Gate Trigger Current (max): 15mA
• Gate Trigger Voltage (max): 1.5V
• Peak Reverse Gate Voltage: 5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 132A
• On State Voltage(max): 1.75@23AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3674-5; 933387730127; BT151-650R

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT151_SER_L_R_4
Product data sheet
Type number
BT151-500L
BT151-500R
BT151-650L
BT151-650R
BT151-800R
Symbol
V
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Conditions
BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R
BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 10 ms
t = 8.3 ms
Rev. 04 — 23 October 2006
/dt = 50 mA/ s
= 20 A; I
Figure 1
5
Figure 2
G
= 50 mA;
mb
j
= 25 C prior to
and
109 C;
3
Figure 4
BT151 series L and R
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
Max
500
650
800
500
650
800
7.5
12
120
132
72
50
2
5
5
0.5
+150
125
© NXP B.V. 2006. All rights reserved.
Thyristors
Version
SOT78
Unit
V
V
V
V
V
V
A
A
A
A
A
A/ s
A
V
W
W
C
C
2
s
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