BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 3

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/ I
T(AV)
2
10
12 A thyristor high blocking voltage high operating temperature
4
Rev. 01 — 6 August 2007
4
2.8
10
2
conduction
2.2
(degrees)
angle
120
180
30
60
90
6
BT151-1000RT
n (number of cycles)
factor
form
1.57
1.9
2.8
2.2
1.9
a
4
T
I
T
j
initial = 25 C max
I
T(AV)
t
p
© NXP B.V. 2007. All rights reserved.
(A)
003aab830
003aab829
a = 1.57
I
TSM
t
10
8
3
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