BT151-500RT,127 NXP Semiconductors, BT151-500RT,127 Datasheet - Page 6

• Manufacturer Part Number: BT151-500RT,127
• Description: THYRISTOR 12A 500V SO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BT151-500RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 8A
• Current - On State (it (rms)) (max): 12.5A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12.5A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• On-state Rms Current (it Rms): 12.5 A
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 0.4 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 2 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063459127

NXP Semiconductors
6. Characteristics
Table 6.
BT151-500RT_1
Product data sheet
Symbol
Dynamic charateristics
dV
t
t
Static characteristics
I
I
I
V
V
I
I
gt
q
GT
L
H
D
R
Fig 7.
T
GT
D
/dt
dV
(V/ s)
D
10
10
10
/dt
10
4
3
2
function of junction temperature; minimum
values
Critical rate of rise of off-state voltage as a
0
Characteristics
Parameter
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
(2)
(1)
50
100
Conditions
V
circuit; see
V
I
dI
V
V
dV
V
see
V
see
T
I
I
see
I
V
V
TM
T
T
T
j
DM
DM
DM
R
D
D
D
R
G
= 23 A; T
= 100 mA; V
= 100 mA; V
= 25 °C; see
D
/dt = 5 A/µs
= 25 V; (dI
= 12 V; T
= 12 V; T
= 500 V; T
= 500 V; T
= 40 A; V
T
/dt = 50 V/µs; R
Figure 8
Figure 9
Figure 12
= 335 V; T
= 335 V; T
= 335 V; T
j
001aaa949
( C)
Figure 7
j
150
j
j
= 25 °C; see
D
Rev. 01 — 18 May 2009
= 25 °C; I
= 25 °C; I
T
j
j
/dt)
D
D
= 125 °C
= 125 °C
= 500 V; I
j
j
j
Figure 10
= 125 °C; gate open
= 125 °C; R
= 125 °C; I
= 12 V; T
= 500 V; T
M
GK
= 30 A/µs;
= 100 Ω
T
G
G
= 100 mA;
= 100 mA;
Figure 11
Fig 8.
j
= 100 mA;
= 25 °C;
TM
j
I
GT(25 C)
GK
= 125 °C
I
= 20 A;
GT
= 100 Ω
3
2
1
0
junction temperature
Normalized gate trigger current as a function of
50
0
SCR, 12 A, 15 mA, 500 V, SOT78
Min
50
200
-
-
-
-
-
-
-
0.25
-
-
50
BT151-500RT
Typ
130
1000
2
70
2
10
7
1.4
0.6
0.4
0.1
0.1
100
© NXP B.V. 2009. All rights reserved.
003aab824
T
j
Max
-
-
-
-
15
40
20
1.75
1.5
-
0.5
0.5
( C)
150
Unit
V/µs
V/µs
µs
µs
mA
mA
mA
V
V
V
mA
mA
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