BT151-500RT,127 NXP Semiconductors, BT151-500RT,127 Datasheet - Page 3

• Manufacturer Part Number: BT151-500RT,127
• Description: THYRISTOR 12A 500V SO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BT151-500RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 8A
• Current - On State (it (rms)) (max): 12.5A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12.5A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• On-state Rms Current (it Rms): 12.5 A
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 0.4 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 2 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063459127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT151-500RT_1
Product data sheet
Symbol
V
V
I
I
dI
I
P
T
T
I
I
P
V
T(AV)
T(RMS)
GM
TSM
2
Fig 1.
stg
j
DRM
RRM
GM
G(AV)
RGM
t
T
/dt
I
T(RMS)
(A)
30
25
20
15
10
5
0
10
duration; maximum values
RMS on-state current as a function of surge
Limiting values
2
rate of rise of on-state
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
I
average gate power
peak reverse gate
voltage
2
t for fusing
10
1
surge duration (s)
1
Conditions
half sine wave; T
half sine wave; all conduction angles;
see
I
half sine wave; t
half sine wave; t
see
t
over any 20 ms period
T
p
= 10 ms; sin-wave pulse
= 20 A; I
Figure
Figure
003aad205
G
1; see
4; see
10
= 50 mA; dI
Rev. 01 — 18 May 2009
p
p
mb
= 8.3 ms; T
= 10 ms; T
Figure 2
Figure 5
= 133 °C; see
G
/dt = 50 mA/µs
Fig 2.
j(init)
I
j(init)
T(RMS)
(A)
16
12
= 25 °C;
= 25 °C
8
4
0
RMS on-state current as a function of mounting
base temperature; maximum values
Figure 3
50
0
SCR, 12 A, 15 mA, 500 V, SOT78
50
BT151-500RT
Min
-
-
-
-
-
-
-
-40
-
-
-
-
-
-
100
© NXP B.V. 2009. All rights reserved.
T
003aad206
mb
Max
500
500
8
12.5
50
4
5
150
150
132
120
72
1
5
( C)
150
Unit
V
V
A
A
A/µs
A
W
°C
°C
A
A
A
W
V
2
3 of 11
s