BT151-800C,127 NXP Semiconductors, BT151-800C,127 Datasheet - Page 3
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BT151-800C,127
Manufacturer Part Number
BT151-800C,127
Description
THYRISTOR 12A 800V TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BT151-500C127.pdf
(6 pages)
Specifications of BT151-800C,127
Package / Case
TO-220AB-3
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
100A, 110A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
12A
Breakover Current Ibo Max
110 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1777
934058482127
BT151-800C
934058482127
BT151-800C
Philips Semiconductors
April 2004
Thyristors
15
10
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible rms current I
5
0
15
10
on-state current I
0
5
0
1000
-50
Ptot / W
100
IT(RMS) / A
conduction
angle
degrees
10
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
1
I
T
Tj initial = 25 C max
dI /dt limit
sinusoidal currents, t
form
factor
T
a = form factor = I
a
4
2.8
2.2
1.9
1.57
T
2
0
I TSM
time
100us
3
TSM
4
IT(AV) / A
, versus pulse width t
Tmb / C
BT151
4
T / s
50
2.8
T(RMS)
5
p
1ms
2.2
T(AV)
/ I
10ms.
6
T(AV)
100
Tmb(max) / C
, where
1.9
109 C
.
a = 1.57
tot
7
, versus
mb
T(RMS)
p
, for
.
10ms
8
105.5
112
118.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
mb
BT151 series C
I
T
Tj initial = 25 C max
100
Product specification
1
T
109˚C.
100
I TSM
time
Rev 1.000
1000
150
10
j
.