BT258S-800R,118 NXP Semiconductors, BT258S-800R,118 Datasheet

THYRISTOR 800V 8A SOT428

BT258S-800R,118

Manufacturer Part Number
BT258S-800R,118
Description
THYRISTOR 800V 8A SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BT258S-800R118.pdf (6 pages)

Specifications of BT258S-800R,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Scr Type
Sensitive Gate
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
5A
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
2.5mA
Current - Non Rep. Surge 50, 60hz (itsm)
75A, 82A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Current - On State (it (rms) (max)
8A
Breakover Current Ibo Max
82 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
On-state Rms Current (it Rms)
8 A
Forward Voltage Drop
1.3 V
Gate Trigger Voltage (vgt)
0.4 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
50 uA
Holding Current (ih Max)
6 mA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934048790118
BT258S-800R /T3
BT258S-800R /T3
Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in
a plastic envelope, suitable for
surface mounting, intended for use in
general
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT428
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 2002
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
NUMBER
t
stg
j
DRM
RGM
GM
G(AV)
T
/dt
PIN
tab
, V
1
2
3
RRM
purpose
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
cathode
anode
anode
gate
switching
and
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
SYMBOL
V
I
I
I
TM
T(AV)
T(RMS)
TSM
DRM
G
/dt = 50 mA/ s
= 10 A; I
, V
1
RRM
tab
2
G
3
= 50 mA;
PARAMETER
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
1
mb
j
= 25 ˚C prior to
111 ˚C
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
a
MAX.
Product specification
125
800
150
0.5
75
82
28
50
5
8
2
5
5
BT258S-800R
1
g
MAX. UNIT
800
75
5
8
Rev 2.000
k
UNIT
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
2
V
A
A
A
s

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BT258S-800R,118 Summary of contents

Page 1

... RMS on-state current TSM Non-repetitive peak on-state current PIN CONFIGURATION tab CONDITIONS half sine wave; T 111 ˚C mb all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT258S-800R MAX. UNIT 800 SYMBOL MIN. MAX. UNIT - 800 - ...

Page 2

... D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258S-800R MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. MAX. UNIT 50 ...

Page 3

... I p 10ms. p 1.6 111 C 1.4 1.2 0.8 0.6 0.4 100 150 , T(RMS Product specification BT258S-800R ITSM / initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT258S-800R 125 typ max 0.04 0 0.1ms 1ms 10ms 0. j-mb pulse width RGK = 100 ohms 50 100 /dt versus junction temperature T ...

Page 5

... Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting. 5 Product specification BT258S-800R seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 2.000 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT258S-800R Rev 2.000 ...

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