Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
... RMS on-state current TSM Non-repetitive peak on-state current PIN CONFIGURATION tab CONDITIONS half sine wave; T 111 ˚C mb all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT258S-800R MAX. UNIT 800 SYMBOL MIN. MAX. UNIT - 800 - ...
... D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258S-800R MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. MAX. UNIT 50 ...
... I p 10ms. p 1.6 111 C 1.4 1.2 0.8 0.6 0.4 100 150 , T(RMS Product specification BT258S-800R ITSM / initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT258S-800R Rev 2.000 ...