2N6508G ON Semiconductor, 2N6508G Datasheet - Page 3

• Manufacturer Part Number: 2N6508G
• Description: THYRISTOR SCR 25A 600V TO220AB
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of 2N6508G

• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 16A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Average On-state Current: 16A
• Hold Current: 40mA
• Gate Trigger Current (max): 30mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 250A
• On State Voltage(max): 1.8@50AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Current, Forward: 25 A
• Current, Surge: 250 A
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 1.5 °C/W
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Voltage, Forward: 1.8 V
• Voltage, Reverse: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N6508GOS

Symbol
V
I
V
I
V
I
110
DRM
RRM
H
13
12
10
90
80
DRM
RRM
TM
0
0
0
0
Figure 1. Average Current Derating
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
I
T(AV)
4.0
= 30
, ON‐STATE FORWARD CURRENT (AMPS)
8.0
60
90
Voltage Current Characteristic of SCR
12
= CONDUCTION ANGLE
180
16
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2N6504 Series
dc
I
Reverse Avalanche Region
Anode -
RRM
20
Reverse Blocking Region
3
at V
RRM
8.0
32
24
16
(off state)
0
0
Figure 2. Maximum On-State Power Dissipation
= CONDUCTION ANGLE
I
T(AV)
on state
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
4.0
+ Current
= 30
Forward Blocking Region
I
H
8.0
V
60
TM
(off state)
90
I
DRM
12
Anode +
at V
DRM
T
J
+ Voltage
= 125 C
16
180
dc
20