2N6508G ON Semiconductor, 2N6508G Datasheet - Page 2

THYRISTOR SCR 25A 600V TO220AB

2N6508G

Manufacturer Part Number
2N6508G
Description
THYRISTOR SCR 25A 600V TO220AB
Manufacturer
ON Semiconductor
Type
SCRr
Datasheets

Specifications of 2N6508G

Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.8V
Current - On State (it (av)) (max)
16A
Current - On State (it (rms)) (max)
25A
Current - Gate Trigger (igt) (max)
30mA
Current - Hold (ih) (max)
40mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
250A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
25A
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Average On-state Current
16A
Hold Current
40mA
Gate Trigger Current (max)
30mA
Gate Trigger Voltage (max)
1.5V
Package Type
TO-220AB
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
250A
On State Voltage(max)
1.8@50AV
Mounting
Through Hole
Pin Count
3 +Tab
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Current, Forward
25 A
Current, Surge
250 A
Primary Type
SCR
Resistance, Thermal, Junction To Case
1.5 °C/W
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-40 to +125 °C
Voltage, Forward
1.8 V
Voltage, Reverse
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N6508GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6508G
Manufacturer:
TOSHIBA
Quantity:
30 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
*Peak Repetitive Off-State Voltage (Note 1)
On‐State Current RMS (180 Conduction Angles; T
Average On‐State Current (180 Conduction Angles; T
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
Forward Peak Gate Power (Pulse Width
Forward Average Gate Power (t = 8.3 ms, T
Forward Peak Gate Current (Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
*Thermal Resistance, Junction-to-Case
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
* Peak Repetitive Forward or Reverse Blocking Current
* Forward On-State Voltage (Note 2) (I
* Gate Trigger Current (Continuous dc)
* Gate Trigger Voltage (Continuous dc) (V
* Holding Current
* Turn‐On Time (I
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated V
Gate Non‐Trigger Voltage (V
Turn‐Off Time (V
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
(Gate Open, Sine Wave 50 to 60 Hz, T
(V
(V
(V
(I
(I
DRM
TM
TM
AK
AK
AK
= 25 A, I
= 25 A, I
and V
= Rated V
= 12 Vdc, R
= 12 Vdc, Initiating Current = 200 mA, Gate Open) T
RRM
R
R
DRM
TM
= 25 A)
= 25 A, T
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
L
= 25 A, I
= 100 W)
= rated voltage)
or V
(T
J
RRM
J
= 25 C unless otherwise noted)
300 ms, Duty Cycle
= 125 C)
AK
GT
, Gate Open)
= 12 Vdc, R
= 50 mAdc)
Characteristic
Characteristic
2N6504
2N6505
2N6507
2N6508
2N6509
TM
Rating
(T
J
AK
= 50 A)
C
1.0 ms, T
= 25 to 125 C)
1.0 ms, T
C
= 25 C unless otherwise noted.)
L
= 12 Vdc, R
= 85 C)
= 100 W, T
2%.
C
C
C
= 85 C)
C
= 85 C)
= 85 C)
= 85 C)
J
L
http://onsemi.com
2N6504 Series
= 125 C)
T
T
T
T
= 100 W, T
T
DRM
J
J
C
C
C
C
= 25 C
= 125 C
= 25 C
= -40 C
= 25 C
= -40 C
, Exponential Waveform)
J
2
= 100 C)
C
= -40 C)
Symbol
Symbol
I
R
I
dv/dt
Symbol
DRM
V
V
V
I
RRM
I
V
P
T
V
T(RMS)
t
I
GT
I
qJC
t
I
TM
GT
GD
P
H
gt
T(AV)
q
I
T
DRM,
TSM
G(AV)
L
RRM
GM
T
GM
stg
J
,
Min
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-40 to +125
-40 to +150
Value
Max
100
400
600
800
250
260
Typ
0.5
2.0
1.5
9.0
1.0
1.5
50
25
16
20
18
15
35
50
-
-
-
-
-
-
Max
2.0
1.8
1.5
2.0
10
30
75
40
80
-
-
-
-
Unit
W
W
V
A
A
A
A
V/ms
C
C
Unit
Unit
C/W
mA
mA
mA
mA
ms
ms
V
V
V
C

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