BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet - Page 9

• Manufacturer Part Number: BGB 540 E6327
• Description: TRANSISTOR RF ACT BIAS SOT-343
• Manufacturer: Infineon Technologies

Specifications of BGB 540 E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: BGB540E6327XT; SP000013194

SPICE Model
BGB420-Chip
Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax)
.MODEL T502 NPN(
+ IS = 2.0045e-16
+ IKF = 0.48731
+ NR = 1.3325
+ NC = 1.1724
+ RE = 0.31111
+ MJE = 0.46576
+ ITF = 0.001
+ MJC = 0.30232
+ VJS = 0.75
+ XTI = 3
Package Equivalent Circuit
Data sheet
B
Q2
4
L
BO
R2
C
2
C
C
2
BF = 72.534
ISE = 1.9049e-14
VAR = 19.705
RB = 8.5757
RC = 0.10105
TF = 6.7661e-12
PTF = 0
XCJC = 0.3
MJS = 0
FC = 0.73234)
1
BE
L
BI
R1
C
CB
1
BGB420
Chip
1
4
2
L
L
L
E
1
EI
EO
Q1
3
3
L
CI
NF = 1.2432
NE = 2.0518
IKR = 0.69141
IRB = 0.00072983
CJE = 1.8063e-15
XTF = 0.42199
CJC = 2.3453e-13
TR = 2.3249e-09
XTB = 0
9
C
C
3
CE
L
L
Q1
Q2
R1
R2
CO
2
Bias
C
T502
T502 (area factor: 0.1)
2.7kΩ
27kΩ
Valid up to 3GHz
VAF = 28.383
BR = 7.8287
ISC = 1.9237e-17
RBM = 3.4849
VJE = 0.8051
VTF = 0.23794
VJC = 0.81969
CJS= 0
EG = 1.11
L
L
L
L
L
L
L
L
C
C
C
C
C
C
BI
B0
EI
EO
CI
CO
1
2
BE
CB
CE
1
2
3
0.36
0.15
0.36
132
0.4
0.3
0.4
0.6
0.4
95
28
88
2001-08-10
BGB420
6
8
nH
nH
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF