BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet
BGB 540 E6327
Specifications of BGB 540 E6327
SP000013194
Related parts for BGB 540 E6327
BGB 540 E6327 Summary of contents
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BGB 420 MMIC ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... Subjects (major changes since last revision) 7 S-Parameter table added 8 Figure “Output Compression Point” added 9 SPICE Model added For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com 2001-08-10 2000-11-28 ...
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BGB420 Active Biased Transistor Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators • G =17.5dB at 1.8GHz ma • Small SOT343 package • Current easy adjustable ...
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Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, T Junction temperature Operating temperature range Storage temperature range Thermal resistance: junction-soldering point Notes: For detailed symbol description refer ...
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RF In Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at T min./max. values verified by random sampling) Parameter Maximum available power gain V =2V, I =20mA, f=1.8GHz D c Insertion power gain =2V, I =20mA V ...
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S-Parameter V =2V, I =20mA (see Electrical Characteristics for conditions Frequency S11 S11 [GHz] Mag Ang 0.1 0.4412 -24.8 0.2 0.4064 -47.4 0.4 0.3261 -81.6 0.6 0.2854 -105.8 0.8 0.2615 -124.2 1.0 0.2525 -136.4 1.2 0.2505 -148.9 1.4 ...
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Power Gain | Gma, Gms=f( 3V, I =20mA Gma/Gms Frequency [GHz] Matching |S |,|S |=f( ...
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SPICE Model BGB420-Chip Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax) .MODEL T502 NPN 2.0045e- 72.534 + IKF = 0.48731 ISE = 1.9049e- 1.3325 VAR = 19.705 + ...
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Typical Application DC Bypass V Bias R Bias I Bias 4 BGB420 Package Outline 2 ±0.2 1.3 ±0 +0.1 0.3 Data sheet Fig. 3: Typical application circuit. Voltage Supply This how to use the ...