BFY193 (P) Infineon Technologies, BFY193 (P) Datasheet - Page 2

• Manufacturer Part Number: BFY193 (P)
• Description: TRANS RF NPN 12V 80MA MICRO-X1
• Manufacturer: Infineon Technologies

Specifications of BFY193 (P)

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 7.5GHz
• Noise Figure (db Typ @ F): 2.3dB ~ 2.9dB @ 2GHz
• Gain: 12.5dB ~ 13.5dB
• Power - Max: 580mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: MICRO-X1
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 80 mA
• Power Dissipation: 580 mW
• Maximum Operating Temperature: + 200 C
• Dc Collector/base Gain Hfe Min: 50 at 30 mA at 8 V
• Gain Bandwidth Product Ft: 8 GHz
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package: Micro-X
• Comment: Replaced by BFY193C
• Vceo (max): 12.0 V
• Ic(max): 80.0 mA
• Ptot (max): 580.0 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Thermal Resistance
Notes.:
1) The maximum permissible base current for V
measurement duration < 1s)
2) At T
3) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
IFAG IMM RPD D HIR
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter base cuttoff current
V
Emitter base cuttoff current
V
S
CB
CE
CB
EB
EB
A
S
 104°C
=25°C; unless otherwise specified
= 20 V, I
= 12 V, I
= 10 V, I
= 2 V, I
= 1 V, I
is measured on the collector lead at the soldering point to the pcb.
S
= + 104 °C. For T
C
C
E
B
E
= 0
= 0
2), 3)
= 0
= 0,5µA
= 0
1.)
3)
S
> + 104 °C derating is required.
CE0
BE
=0
> 12V
Symbol
V
V
V
V
I
I
P
T
T
T
R
Symbol
I
I
I
I
I
CBO
CEX
CBO
EBO
EBO
C
B
CEO
CES
CBO
EBO
tot
j
op
stg
th JS
2 of 4
FBE
measurements is 30mA (spot-
min.
-
-
-
-
-
Values
12
20
20
2
80
10
580
200
-65...+200
-65...+200
< 165
1)
Values
typ.
-
-
-
-
-
max.
100
600
50
25
0.5
V2, February 2011
Unit
µA
µA
nA
A
A
BFY193
Unit
V
V
V
V
mA
mA
mW
C
C
C
K/W