BFY193 (P) Infineon Technologies, BFY193 (P) Datasheet
BFY193 (P)
Specifications of BFY193 (P)
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BFY193 (P) Summary of contents
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HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package GHz 2.3 dB ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 104°C 2 Junction temperature Operating temperature range Storage temperature range Thermal Resistance 3) Junction-soldering point Notes.: ...
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Electrical Characteristics (continued) Parameter DC Characteristics Base-Emitter forward voltage mA current gain mA Characteristics Transition frequency I = 40mA ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...