BFS 481 E6327 Infineon Technologies, BFS 481 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFS 481 E6327
• Description: TRANSISTOR RF NPN 12V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BFS 481 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 20dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 8 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Continuous Collector Current: 0.02 A
• Power Dissipation: 175 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFS481E6327XT; SP000011084

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
200
160
140
120
100
80
60
40
20
-
0
2
1
0
10
0
/P
-7
totDC
20
10
-6
=
40
10
-5
(t
p
60
)
10
-4
80
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
-3
100
= (T
10
-2
120 °C
S
)
T
t
s
p
S
150
10
0
4
Permissible Pulse Load R
K/W
10
10
10
3
2
1
10
-7
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
-3
2007-04-26
10
=
-2
BFS481
(t
t
s
p
p
)
10
0