BFP 405 E6433 Infineon Technologies, BFP 405 E6433 Datasheet - Page 7

• Manufacturer Part Number: BFP 405 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 405 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 55 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP405E6433XT; SP000011033

Noise figure F = ƒ (I
V
Noise figure F = ƒ (f)
V
CE
CE
dB
dB
= 2 V, Z
2.5
1.5
0.5
= 1 V, Z
1.5
0.5
4
3
2
1
0
3
2
1
0
0
0
2
1
S
S
= Z
= Z
Sopt
Sopt
4
2
C
)
6
3
IC = 5 mA
IC = 2 mA
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
8
4
GHz
mA
I
f
C
12
6
7
Noise figure F = ƒ (I
V
Source impedance for min.
noise figure vs. frequency
V
CE
CE
dB
= 2 V, f = 1.8 GHz
2.5
1.5
0.5
= 3 V, I
0
4
3
2
1
0
+j10
0
-j10
+j25
10
-j25
C
2
= 2 mA / 5 mA
25
6GHz
4
5GHz
C
4GHz
)
50
+j50
-j50
6
3GHz
100
ZS = 50 Ohm
ZS = ZSopt
8
2009-11-06
2mA
5mA
1.8GHz
BFP405
0.9GHz
mA
+j100
-j100
I
C
12