BFP 405 E6433 Infineon Technologies, BFP 405 E6433 Datasheet - Page 6

• Manufacturer Part Number: BFP 405 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 405 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 55 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP405E6433XT; SP000011033

Transition frequency f
f = 2 GHz
V
Power gain G
V
f = parameter in GHz
CE
CE
GHz
dB
= parameter in V
= 3V
26
22
20
18
16
14
12
10
40
32
28
24
20
16
12
8
6
4
8
4
0
0
0
4
4
ma
, G
8
8
ms
12
= ƒ (I
T
= ƒ (I
12
16
C
C
)
)
16
20
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
mA
mA
1.5V
0.5V
I C
I C
4V
3V
2V
1V
22
26
6
Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 5 mA
dB
dB
= 3 V, I
44
36
32
28
24
20
16
12
40
32
28
24
20
16
12
8
4
0
8
4
0
0
0
1
C
1
Gms
|S21|²
2
= 5 mA
ma
ma
, G
, G
3
2
ms
ms
4
, |S
= ƒ (V
3
5
21
6
|
2
CE
4
2009-11-06
Gma
= ƒ (f)
7
)
0.15GHz
0.45GHz
0.9GHz
1.5GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
BFP405
8 GHz
V
f
V CE
10
6