BFS 17S H6327 Infineon Technologies, BFS 17S H6327 Datasheet - Page 4
BFS 17S H6327
Manufacturer Part Number
BFS 17S H6327
Description
TRANS RF NPN 15V 25MA SOT363
Manufacturer
Infineon Technologies
Datasheet
1.BFS17SE6327.pdf
(7 pages)
Specifications of BFS 17S H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
300
240
220
200
180
160
140
120
100
80
60
40
20
-
0
3
2
1
0
10
0
/P
-6
totDC
20
10
-5
=
40
10
(t
p
-4
60
)
10
80
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
100
10
= (T
-2
120 °C
S
)
s
T
t
p
S
150
10
0
4
Permissible Pulse Load R
Collector-base capacitance C
Emitter-base capacitance C
f = 1 MHz
K/W
10
10
10
10
10
pF
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-1
1
0
3
2
1
0
10
0
-6
2
CCB
10
4
-5
CEB
6
10
-4
8
10
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
12
thJS
10
eb
2007-03-30
14
-2
cb
=
= (V
BFS17S
= (V
16
(t
s
V
p
EB
t
V
p
CB
)
CB
)
, V
10
20
)
EB
0