BFS17SE6327 Infineon Technologies, BFS17SE6327 Datasheet - Page 4

• Manufacturer Part Number: BFS17SE6327
• Description: DUAL NPN TRANS RADIO FREQ BROAD
• Manufacturer: Infineon Technologies

Specifications of BFS17SE6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (db Typ @ F): 3dB ~ 5dB @ 800MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Other names: BFS17SE6327XT; BFS17SE6327XT; SP000011081

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
300
240
220
200
180
160
140
120
100
80
60
40
20
-
0
3
2
1
0
10
0
/P
-6
totDC
20
10
-5
=
40
10
(t
p
-4
60
)
10
80
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
100
10
= (T
-2
120 °C
S
)
s
T
t
p
S
150
10
0
4
Permissible Pulse Load R
Collector-base capacitance C
Emitter-base capacitance C
f = 1 MHz
K/W
10
10
10
10
10
pF
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-1
1
0
3
2
1
0
10
0
-6
2
CCB
10
4
-5
CEB
6
10
-4
8
10
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
12
thJS
10
eb
2007-03-30
14
-2
cb
=
= (V
BFS17S
= (V
16
(t
s
V
p
EB
t
V
p
CB
)
CB
)
, V
10
20
)
EB
0