BFS17SE6327 Infineon Technologies, BFS17SE6327 Datasheet - Page 2
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BFS17SE6327
Manufacturer Part Number
BFS17SE6327
Description
DUAL NPN TRANS RADIO FREQ BROAD
Manufacturer
Infineon Technologies
Datasheet
1.BFS17SE6327.pdf
(7 pages)
Specifications of BFS17SE6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Other names
BFS17SE6327XT
BFS17SE6327XT
SP000011081
BFS17SE6327XT
SP000011081
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 2 mA, V
= 25 mA, V
= 10 mA, I
= 2.5 V, I
= 10 V, I
= 25 V, I
B
CE
B
E
E
= 0
C
CE
= 1 mA
= 0
= 0
= 0
= 1 V, pulse measured
= 1 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
h
V
CBO
EBO
FE
(BR)CEO
CEsat
min.
15
40
20
-
-
-
-
Values
typ.
0.1
70
-
-
-
-
-
max.
2007-03-30
0.05
150
100
0.4
10
-
-
BFS17S
Unit
V
µA
-
V