MRF581G Microsemi Power Products Group, MRF581G Datasheet - Page 4

• Manufacturer Part Number: MRF581G
• Description: TRANS NPN 18V 200MA MACRO X
• Manufacturer: Microsemi Power Products Group

Specifications of MRF581G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3dB ~ 3.5dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 50mA, 5V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MRF581GMI; MRF581GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor
C7, C10 — 10 µF, Tantalum Capacitor
RFC — VK–200, Ferroxcube
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,
TL3 — Microstrip 0.162, x 0.800,
TL5 — Microstrip 0.120, x 0.440,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
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C2, C3 — 1.0–10 pF, Johanson Capacitor
R1 — 1.0 kΩ Res.
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL2 — Microstrip 0.162, x 1.000,
TL4 — Microstrip 0.162, x 0.440,
TL6 — Microstrip 0.120, x 1.160,
MRF581
MRF581G
MRF581A
MRF581AG