UPA862TD-A CEL, UPA862TD-A Datasheet - Page 6

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (Unless otherwise specified, T
4
300
250
200
150
100
210
190
180
50
0.5
0.4
0.3
0.2
0.1
0
0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
25
Q2
Q1
Collector to Base Voltage V
Ambient Temperature T
2 Elements in total
2
50
Mounted on Glass Epoxy PCB
(1.08 cm
4
75
Q1
2
1.0 mm (t) )
100
6
A
(˚C)
CB
f = 1 MHz
125
8
(V)
Data Sheet P15685EJ1V0DS
150
10
1.0
0.8
0.6
0.4
0.2
0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
A
= +25 C)
Collector to Base Voltage V
2
4
Q2
6
CB
f = 1 MHz
8
(V)
PA862TD
10