UPA862TD-A CEL, UPA862TD-A Datasheet - Page 4
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UPA862TD-A
Manufacturer Part Number
UPA862TD-A
Description
TRANSISTOR NPN DUAL TD
Manufacturer
CEL
Specifications of UPA862TD-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
6V, 5.5V
Frequency - Transition
12GHz, 6.5GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V / 100 @ 5mA, 1V
Current - Collector (ic) (max)
30mA, 100mA
Mounting Type
Surface Mount
Package / Case
TD
Dc Collector/base Gain Hfe Min
150
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T
2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Mounted on 1.08 cm
Parameter
2
1.0 mm (t) glass epoxy PCB
Symbol
P
V
V
V
T
tot
I
T
CBO
CEO
EBO
stg
C
Note
j
A
= +25 C)
Data Sheet P15685EJ1V0DS
180
Q1
30
210 in 2 elements
9
6
2
65 to +150
Ratings
150
100
190
5.5
1.5
Q2
9
Unit
mW
mA
V
V
V
C
C
PA862TD