UPA862TD-A CEL, UPA862TD-A Datasheet - Page 3

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document No. P15685EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5435, 2SC5800)
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
ORDERING INFORMATION
3-pin thin-type ultra super minimold part No.
PA862TD
PA862TD-T3
Remark To order evaluation samples, consult your NEC sales representative.
Q1: Built-in high gain transistor
Q2: Built-in low phase distortion transistor suited for OSC operation
Part Number
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
f
f
T
T
= 12.0 GHz TYP., S
= 4.5 GHz TYP., S
Unit sample quantity is 50 pcs.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
50 pcs (Non reel)
10 kpcs/reel
21e
21e
Quantity
IN A 6-PIN LEAD-LESS MINIMOLD
2
2
= 4.0 dB TYP. @ V
= 8.5 dB TYP. @ V
DATA SHEET
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
NPN SILICON RF TWIN TRANSISTOR
CE
CE
= 1 V, I
2SC5435
= 3 V, I
Q1
C
C
= 5 mA, f = 2 GHz
= 10 mA, f = 2 GHz
Supplying Form
2SC5800
Q2
PA862TD
©
2001