MRF581 Microsemi Power Products Group, MRF581 Datasheet - Page 3

• Manufacturer Part Number: MRF581
• Description: TRANS NPN 18V 200MA MACRO X
• Manufacturer: Microsemi Power Products Group

Specifications of MRF581

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 18V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3dB ~ 3.5dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MRF581MI; MRF581MI

FUNCTIONAL
G
Symbol
(MHz)
|S
G
MSG
U max
1000
NF
f
100
200
300
400
500
600
700
800
900
21
NF
|
2
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
Noise Figure (50ohms)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
|S11|
.610
.659
.671
.675
.677
.678
.677
.679
.678
.682
S11
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∠ φ
-137
-161
-171
-178
176
172
168
184
160
156
Test Conditions
|S21|
23.8
13.2
9.0
6.8
5.5
4.6
4.0
3.5
3.1
2.8
S21
∠ φ
116
98
89
83
77
72
68
64
60
56
|S12|
.026
.033
.040
.047
.055
.064
.073
.082
.092
.102
Min.
13
14
S12
-
-
-
MRF581
MRF581G
MRF581A
MRF581AG
∠ φ
46
47
51
55
58
61
62
63
64
65
Value
Typ.
15.5
17.8
3.0
20
15
Max.
|S22|
3.5
.522
.351
.304
.292
.293
.299
.306
.314
.322
.311
-
-
-
S22
Unit
dB
dB
dB
dB
dB
-106
-120
-128
-132
-134
-135
-136
-138
-139
-78
∠ φ