BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 6

TRANS NPN 10V 250MA SOT223

BLT80,115

Manufacturer Part Number
BLT80,115
Description
TRANS NPN 10V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLT80,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
900MHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 150mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934004160115
BLT80 T/R
BLT80 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLT80,115
Quantity:
1 400
Philips Semiconductors
Test circuit information
List of components used in test circuit (see Figs 7 and 8)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (
1996 May 09
handbook, full pagewidth
C1, C8
C2, C3
C4
C5, C7
C6
L1
L2, L7
L3, L8
L4, L9
L5
L6
L10
R1, R2
UHF power transistor
COMPONENT
1
16
"; thickness of the copper sheet 35 m.
50
input
multilayer ceramic chip capacitor; note 1 100 pF
type 9105 Voltronix KM10 trimmer
multilayer ceramic chip capacitor; note 1 220 pF
film dielectric trimmer
multilayer ceramic chip capacitor; note 1 1 nF
stripline; note 2
1 turn 0.4 mm copper wire on
grade 3B core
6 turns enamelled 0.8 mm copper wire
grade 3B Ferroxcube wideband
HF choke
stripline; note 2
stripline; note 2
stripline; note 2
metal film resistor
C1
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
C2
L1
R1
DESCRIPTION
L2
L3
L4
C3
L5
6
DUT
0.6 to 10 pF
1.4 to 5.5 pF
50
50
50
50
10 , 0.25 W
VALUE
L6
L7
L8
C4
length 13 mm
width 4.85 mm
internal dia. 3 mm
length 8.4 mm
width 4.85 mm
length 20 mm
width 4.85 mm
length 21 mm
width 4.85 mm
L9
R2
DIMENSIONS
C5
L10
C6
C8
C7
V CC
Product specification
CATALOGUE No.
2222 809 09001
4330 030 32221
4312 020 36640
r
MBB649
= 2.2); thickness
50
output
BLT80

Related parts for BLT80,115