BLT80,115 NXP Semiconductors, BLT80,115 Datasheet - Page 4

TRANS NPN 10V 250MA SOT223

BLT80,115

Manufacturer Part Number
BLT80,115
Description
TRANS NPN 10V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLT80,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
900MHz
Power - Max
2W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 150mA, 5V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934004160115
BLT80 T/R
BLT80 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLT80,115
Quantity:
1 400
Philips Semiconductors
CHARACTERISTICS
T
Note
1. Measured under pulsed conditions: t
1996 May 09
handbook, halfpage
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
V
CE
Fig.3
h FE
100
= 7.5 V; t
80
60
40
20
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
DC current gain as a function of collector
current; typical values.
p
200 s;
200
PARAMETER
0.02; T
400
j
= 25 C.
600
p
I C (mA)
MRA776
200 s;
800
open emitter; I
open base; I
open collector; I
V
V
see Fig.3
V
see Fig.4
V
CE
CE
CB
CE
= 10 V; V
= 5 V; I
= 7.5 V; I
= 7.5 V; I
0.02.
4
handbook, halfpage
CONDITIONS
C
C
= 150 mA; note 1;
E
C
I
BE
E
= 5 mA
C
= i
= i
= 0; f = 1 MHz
(pF)
E
= 2.5 mA
C c
Fig.4
= 0
e
= 0.5 mA
e
= 0; f = 1 MHz; T
5
4
3
2
1
0
= 0; f = 1 MHz;
0
Collector capacitance as a function of
collector-base voltage; typical values.
4
j
= 25 C.
8
20
10
3
25
MIN.
12
Product specification
0.1
3.5
2.5
MAX.
16
V CB (V)
MRA773
BLT80
20
V
V
V
mA
pF
pF
UNIT

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