BLT81,115 NXP Semiconductors, BLT81,115 Datasheet - Page 8

• Manufacturer Part Number: BLT81,115
• Description: TRANS NPN 9.5V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT81,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 2W
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 9.5V
• Gain: 6.5dB
• Transistor Type: NPN
• Frequency - Transition: 900MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934019790115::BLT81 T/R::BLT81 T/R

Philips Semiconductors
1996 May 09
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
strap
strap
C1
C2
C3
L1
L3
R1
C4
C5
L2
L4
C6
C7
L5
mounting
screws
140
(8x)
8
C9
L6
C8
L8
L7
R2
L9
rivets
(14x)
C10
V CC
C11
L10
C12
C13
strap
strap
MEA898
C14
Product specification
80
BLT81