NE681M03-A CEL, NE681M03-A Datasheet - Page 3

• Manufacturer Part Number: NE681M03-A
• Description: TRANSISTOR NPN 1GHZ SC-90
• Manufacturer: CEL

Specifications of NE681M03-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2.7dB @ 1GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.065 A
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

(1) Gummel-Poon Model
BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
Parameters
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
RBM
VAF
VAR
CJE
MJE
CJC
VJC
VJE
ISE
IKR
ISC
IRB
IKF
NR
BF
NF
NE
BR
RE
RB
NC
RC
IS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
239.6e-18
1.933e-6
1.55e-18
11.81e-3
1.2e-12
0.4e-12
0.9854
0.9771
0.4844
0.5275
0.200
18.25
1.860
0.870
4.635
1e-6
0.77
125
Q1
4.0
5.2
12
50
10
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
XTI
FC
TR
EG
KF
TF
AF
Base
L
BX
10e-12
0.3e-9
0.223
0.75
0.40
0.13
43.1
1.11
Q1
0.5
25
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
hFE = 124 at V
UNITS
C
CE
Parameters
time
capacitance
inductance
resistance
voltage
current
Parameter
C
C
L
L
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
Q1
C
CEPKG
L
0.1 to 5.0 GHz
V
12/98
CX
CE
CE
= 3 V, I
= 2.5 V to 8 V, I
Collector
C
= 7 mA
seconds
farads
henries
ohms
volts
amps
Units
0.07e-12
0.01e-12
0.08e-12
0.08e-12
681M03
0.12e-9
0.10e-9
0.12e-9
C
0.3e-9
0.8e-9
= 0.3 mA to 20 mA
Internet: http://WWW.CEL.COM
06/10/2002