NE681M03-A CEL, NE681M03-A Datasheet

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NE681M03-A

Manufacturer Part Number
NE681M03-A
Description
TRANSISTOR NPN 1GHZ SC-90
Manufacturer
CEL
Datasheet
1.NE681M03-T1-A.pdf (4 pages)

Specifications of NE681M03-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.7dB @ 1GHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
NEC's NE681M03 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M03" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
Notes:
• NEW M03 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
DESCRIPTION
SYMBOLS
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
f
NF = 1.4 dB
T
|S
C
= 7 GHz
h
I
I
NF
CBO
EBO
21E
FE 2
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
f
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
NEC's NPN SILICON TRANSISTOR
CE
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
= 3 V, I
CE
PACKAGE OUTLINE
1
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 7 mA, f = 1 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 10 V, I
= 7 mA, f = 1 GHz
(T
C
A
C
C
= 7 mA, f = 1 GHz
E
= 25°C)
= 7 mA
= 0
E
= 0, f = 1 MHz
= 0
California Eastern Laboratories
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
1.4 ±0.1
(0.9)
0.59±0.05
0.45
0.45
UNITS
0.2±0.1
GHz
dB
dB
µA
µA
pF
PACKAGE OUTLINE M03
1
2
1.2±0.05
0.8±0.1
MIN
4.5
10
80
NE681M03
(Units in mm)
NE681M03
2SC5433
3
M03
TYP
7.0
1.4
12
0.3±0.1
0.15
-0.05
+0.1
MAX
145
2.7
0.8
0.8
0.9

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NE681M03-A Summary of contents

Page 1

... T • LOW NOISE FIGURE 1.4 dB DESCRIPTION NEC's NE681M03 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ flat lead style "M03" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles ...

Page 2

... Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector to Emitter Voltage ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 NE681M03 NE681M03-T1 125 °C 150 -65 to +150 ° 25°C) A 500 300 200 100 ...

Page 3

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

Page 4

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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