NE681M03-A CEL, NE681M03-A Datasheet - Page 2

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NE681M03-A

Manufacturer Part Number
NE681M03-A
Description
TRANSISTOR NPN 1GHZ SC-90
Manufacturer
CEL
Datasheet

Specifications of NE681M03-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.7dB @ 1GHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
NE681M03
SYMBOLS
in permanent damage.
V
V
V
T
CBO
CEO
P
T
EBO
I
STG
C
T
J
65
55
45
35
25
15
5
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Voltage, V
PARAMETERS
COLLECTOR CURRENT vs.
2
4
6
UNITS
mW
mA
8
°C
°C
CE
V
V
V
(V)
1
10
(T
-65 to +150
RATINGS
A
(T
= 25°C)
125
150
1.5
20
10
65
A
= 25°C)
ORDERING INFORMATION
NE681M03-T1-A
PART NUMBER
NE681M03-A
500
300
100
200
30
70
50
20
10
1
FORWARD CURRENT GAIN
vs. COLECTOR CURRENT
QUANTITY
Collector Current, I
2
3
5
7
10
C
(mA)
V
20
CE
= 8 V
30
50

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