NE68718-T1-A CEL, NE68718-T1-A Datasheet - Page 5

• Manufacturer Part Number: NE68718-T1-A
• Description: TRANSISTOR NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE68718-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 90mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.03 A
• Power Dissipation: 90 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

External LNAs reduce front-end noise and improve receiver sensitivity. Combined with tuning and distributed filtering
they can improve noise performance by more than 1.5dB over on-chip LNAs.
MMIC & Transistor LNAs
UPD5740T6N
UPC3237TK
NE662M04
NESG2031M05
NESG3031M05
UPC8233TK
UPG2310TK
NESG3032M14
NESG3033M14
NE3508M04
SiGe & SiGe:C RFIC LNAs
Part Number
UPC8211TK
UPC8215TU
UPC8230TU
UPC8231TK
UPC8232T5N
UPC8233TK
UPC8236T6N
UPC8240T6N
UPC8244T6N
Notes: 1. Under development, please inquire
RFIC LNAs for Improved GPS Signal Performance
Front End Components for 450 MHz to 2.5 GHz
1
STAGE
FIRST
Low Loss
Pre-Filter
Description
Low current
High gain, highly integrated
Low noise & distortion, highly integrated 3.0
Low noise & current, high gain
Low noise & current, highly integrated
Low voltage, current & noise, high gain
Low voltage, noise & distortion,
highly integrated
Low voltage & noise, high gain,
highly integrated
Low voltage, noise & distortion,
adjustable current, gain & IIP
Transistor LNAs
RFIC
Switches
RFIC &
Wideband CMOS LNA IC with bypass for mobile DTV
SiGe:C RFIC: 1.4dB NF, 15.3 dB Gain, for DTV
Silicon Bipolar Transistor: 1.0 dB NF, 21dB Gain
SiGe Bipolar Transistor: 0.7dB NF, 23dB Gain
SiGe Bipolar Transistor: 0.6dB NF, 16dB Gain
SiGe:C RFIC: 0.95dB NF, 20dB Gain, 1.8V V
Two stage GaAs MMIC: 1.7 dB NF, 25.5dB Gain, 28.5dBm OIP
SiGe Bipolar Transistor: 0.6dB NF, 17.5dB Gain
SiGe Bipolar Transistor: 0.6dB NF, 17.5dB Gain, ESD protection
GaAs FET: 0.4 dB NF, 14 dB Gain
Filter
(Performance @ 1GHz)
RFIC
LNA
SECOND
STAGE
High Rejection
Transceiver
Post-Filter
WiMAX
3
STAGE
THIRD
Voltage
Supply
3.0
3.0
3.0
3.0
2.7
2.7
2.7
2.7
(V)
3 - 10
(mA)
I
3.5
6.0
3.8
3.0
3.5
6.5
6.5
10
CC
CC
Receiver
Receiver
Figure
Noise
Tuner /
1.30
1.30
0.85
0.80
0.95
0.90
0.80
0.90 14.5 – 18.5 0 – +5
(dB)
1.0
GPS
IC
3
18.5
18.5
19.5
Gain
(dB)
27
20
17
20
28
continued
(dBm)
-14.5
-21.5
Multi-Throw
-8.5
IIP
-12
-10
Switches
-5
-8
-3
3
450 MHz
4
4
4
Total External
Components
Req’d
9
4
5
9
5
8
5
5
7
915 MHz
4
4
4
4
4
4
4
4
4
Package
TK
TU
TU
TK
T5N low profile
TK
T6N low profile
T6N low profile
T6N low profile
Transceiver
WiMAX
2.4 GHz
4
4
4
4
4
4
4
4
5