NE68718-T1-A CEL, NE68718-T1-A Datasheet - Page 12

• Manufacturer Part Number: NE68718-T1-A
• Description: TRANSISTOR NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE68718-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 90mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.03 A
• Power Dissipation: 90 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

U PG2118K
12
Low Noise GaAs FETs, 100 MHz to 20GHz
GaAs RFIC Low Noise Amplifiers
GaAs RFIC Power Amplifiers for Handset and Wireless Applications
Notes: 1. Under development, please inquire
UPG2250T5N
UPG2251T6M
UPG2301T5L
UPG2314T5N
U PG2310TK
NE3210S01
NE350184C
NE3503M04
NE3508M04
NE3509M04
NE3509M14
NE3510M04
NE3513M04
NE3514S02
NE3511S02
NE3512S02
NE3515S02
NE3517S03
NE4210S01
Number
Number
Number
Part
Part
Part
GaAs Devices: FETs, RFIC LNAs & Power Amplifiers
1
1
Length Width
Gate
(µm)
0.2
0.2
0.2
0.6
0.6
0.6
0.6
0.2
0.2
0.2
0.2
0.2
0.2
—
2400 to 2500
450 to 2500
868 to 2500
868 to 2500
868 to 2500
868 to 2500
Frequency
Range
2300 to 2500
(MHz)
Frequency
Gate
(µm)
160
160
160
800
400
400
280
160
160
160
160
200
160
Range
ELECTRICAL CHARACTERISTICS (T
(MHz)
—
Recommended
Frequency
10 to 14
10 to 26
0.1 to 6
0.1 to 6
0.1 to 6
0.1 to 6
Range
2 to 18
4 to 20
2 to 18
4 to 18
4 to 18
4 to 20
6 to 18
2 to 18
(GHz)
P
f = 2450 MHz
f = 2450 MHz
f = 2450 MHz
f = 2450 MHz
f = 2450 MHz
TYPICAL ELECTRICAL CHARACTERISTICS (T
P
f = 915 MHz
P
P
P
P
Conditions
V
V
V
V
IN
V
IN
IN
IN
IN
IN
V
DD
DD
DD
CC
D
= +4 dBm
CC
= 0 dBm
= -5dBm
= 3.2 V
= 0 dBm
= 0 dBm
= 0 dBm
Test
= 1.8 V
= 3.0 V
= 3.0 V
= 3.3 V
= 3 V
Conditions
V
CC
Test
= 3.0 V
Frequency
(GHz)
Test
12
20
12
12
12
12
20
12
20
12
2
2
2
2
+31.5 TYP
+20 TYP
+25 TYP
+25 TYP
+23 TYP
+20 TYP
Output
Power
(dBm)
Typical Specifications @ T
NF/G
V
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
(V)
DS
A
Power
(dBm)
= 25°C)
Gain
A
27
(mA)
Bias
I
10
10
10
10
10
10
10
10
10
10
10
10
10
Efficiency
DS
6
50 TYP
55 TYP
58 TYP
47 TYP
50 TYP
50 TYP
Added
Power
(%)
NF
(dB)
0.35
0.55
0.40
0.45
0.35
0.30
0.35
0.45
0.75
0.50
0.7
0.4
0.3
0.7
Figure
Noise
(dB)
OPT
1.8
A
13.5
13.5
11.5
14.0
17.5
17.5
19.0
13.5
13.5
13.0
10.0
12.5
13.5
13.0
(dB)
G
A
= 25°C
A
Package
= 25°C)
Style
T5N
T6M
T5N
T5L
(mA)
K
I
30
CC
Power Bias
V
3.0
3.0
3.0
3.0
3.0
3.0
(V)
—
—
—
—
—
—
—
—
DS
(mA)
I
30
20
20
30
25
15
—
—
—
—
—
—
—
—
2 stage HBT Power Amplifier
DS
(dBm)
P
3.0V Power Amplifier IC
+13
with internal matching
1dB
Power Amplifier IC
Power Amplifier IC
miniature package
Low current HBT,
3 stage E-Mode
(dBm)
+18.0
+14.0
+14.0
+12.0
+14.0
+12.0
P
Description
1.8 to 3.5 V
—
—
—
—
—
—
—
—
1dB
Package
Package
Chip /
Code
M04
M04
M04
M14
M04
M04
84C
S01
S02
S02
S02
S02
S03
S01
TK
Micro-X Ceramic
Micro-X Plastic
Micro-X Plastic
Micro-X Plastic
Micro-X Plastic
Micro-X Plastic
Description
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Plastic SMD
Package
Chip /
Bluetooth, ZigBee, ISM
Bluetooth, ZigBee, ISM
Bluetooth, ZigBee, ISM
Bluetooth, ZigBee, ISM
SDARS, ISM
Application
Application
AMR, ISM
Screening
Available
Grades
D
D
D
D
D
D
D
D
D
D
D
D
D
D