NE68718-T1-A CEL, NE68718-T1-A Datasheet - Page 4

• Manufacturer Part Number: NE68718-T1-A
• Description: TRANSISTOR NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE68718-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 13GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 90mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.03 A
• Power Dissipation: 90 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Wi-Fi • Bluetooth • ZigBee • Automated Meter Reading • Mesh & Home Area Networks • ISM Band applications
Front End ICs
UPG2253T6S
UPG2254T6W
MMIC & Transistor Power Amplifiers
UPG2118K
UPG2250T5N
UPG2301T5L
UPG2314T5N
UPG2251T6M
NE5500234
NE5511279A
NE5531079A
NESG250134
NESG260234
NESG270034
NE5520379A
NE664M04
NE5520279A
NESG2101M05
Medium & High Power GaAs RFIC Switches
UPG2155TB
UPG2009TB
UPG2015TB
UPG2030TK
UPG2179TB
UPG2406TK /T6R
UPG2404T6Q
UPG2405T6Q
UPG2413T6M / T6Z
UPG2150T5L
Low Power CMOS & GaAs RFIC Switches
UPD5713TK
UPG2159T6R
UPG2012TB / TK
UPG2214TB / TK
Notes: 1. Under development, please inquire
Front End Components for 450 MHz to 2.5 GHz Applications
UPG225x
Front End ICs
1
Single or Multi Throw
Amplifiers
Power
RFIC Switches
Choose
UPGxxxx
SP3T Switches
+19 dBm GaAs RFIC: PA, 2 SPDTs, filter, Tx/Rx bypass path
+20 dBm GaAs RFIC: Low cost version of UPG2253, miniature pkg
+ 31.5 dBm Three Stage GaAs MMIC
+ 25 dBm GaAs MMIC, operates at 1.8 or 3.0 V
+ 23 dBm Two stage GaAs HBT
+ 20 dBm Low current GaAs MMIC
+ 25 dBm GaAs MMIC, fully matched
Silicon LD-MOSFET: 32.5 dBm P
Silicon LD-MOSFET: 40 dBm P
Silicon LD-MOSFET: 40 dBm P
0.8 Watt SiGe HBT
1 Watt SiGe HBT
2 Watt SiGe HBT
3 watt LDMOS FET: 35.5 dBm P
0.4 Watt Silicon Bipolar Transistor Driver
LDMOS FET: 32dBm P
120 mW SiGe Bipolar Transistor Driver
SPDT, low harmonics, ideal for high power applications
SPDT, high power, high linearity, no compromise performance
SPDT, medium power, single control
SPDT, great all-around med power device, in mini flat-lead pkg
SPDT, industry’s best low cost, med power switch, industry standard pkg
SPDT, medium power, choice of packages
SP3T, high power, ideal for triple mode cellular phone, NFC
SP3T, miniature package for Bluetooth, WLAN, NFC
SP3T, medium power, low insertion loss, low profile package
SP3T, 35 dB isolation between WLAN & B’tooth ports
Low cost CMOS SPDT, single control, low profile package
SPDT, low insertion loss, high isolation, 1.8 or 3 V
Single control GaAs SPDT, TB or mini flat-lead TK package
Low cost GaAs SPDT, performance guaranteed at 1.8 & 3.0 Volts
Amplifiers
Power
OUT
typ
High Power
RFIC Switches
OUT
OUT
OUT
OUT
RFIC Switches
typ
typ
LNAs
typ
Low Power
typ
LNAs
5 - 6 GHz
5 - 6 GHz
2.4 GHz
2.4 GHz
OUT
IN
System-on-Chip
UPG225x Front End IC
CEL ZIC2410
Transceiver
Transceiver
802.15.4
Chipset
450 MHz
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915 MHz
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2.4 GHz
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