BFG590,215 NXP Semiconductors, BFG590,215 Datasheet - Page 9

• Manufacturer Part Number: BFG590,215
• Description: TRANS NPN 15V 200MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG590,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022980215; BFG590 T/R; BFG590 T/R

NXP Semiconductors
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
NPN 5 GHz wideband transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
A
max
A 1
0.1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
Rev. 04 - 12 November 2007
1.4
1.2
E
3
2
1.9
w
e
B
scale
M
EIAJ
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
BFG590; BFG590/X
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
Product specification
L p
0.1
y
A
ISSUE DATE
97-02-28
c
9 of 11
SOT143B
X