BFG590,215 NXP Semiconductors, BFG590,215 Datasheet - Page 8

• Manufacturer Part Number: BFG590,215
• Description: TRANS NPN 15V 200MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG590,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022980215; BFG590 T/R; BFG590 T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistors
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 4 V.
= 4 V Z
Fig.12 Common emitter reverse transmission coefficient (S
o
Fig.13 Common emitter output reflection coefficient (S
= 50
180
180
o
o
0.25
0
135
0.20
135
135
135
0.2
0.2
o
o
o
o
0.2
0.15
0.5
0.5
3 GHz
Rev. 04 - 12 November 2007
0.10
0.5
0.05
90
90
90
90
1
1
1
o
o
o
o
40 MHz
2
3 GHz
40 MHz
2
2
5
22
45
45
45
45
); typical values.
12
o
o
o
o
5
5
MGC803
); typical values.
MGC804
BFG590; BFG590/X
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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