BFG10W/X,115 NXP Semiconductors, BFG10W/X,115 Datasheet - Page 3

• Manufacturer Part Number: BFG10W/X,115
• Description: TRANS NPN 10V 250MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 1.9GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036590115; BFG10W/X T/R; BFG10W/X T/R

NXP Semiconductors
CHARACTERISTICS
T
1995 Sep 22
handbook, full pagewidth
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
= 25 C (unless otherwise specified).
(BR)CBO
(BR)CEO
(BR)EBO
UHF power transistor
c
re
Z th j-a
(K/W)
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
10
10
10
1
10
3
2
−6
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
δ = 1
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
PARAMETER
10
−5
10
−4
open base; I
open emitter; I
open collector; I
V
I
I
I
C
E
C
CE
= 50 mA; V
= i
= 0; V
= 6 V; V
e
= 0; V
10
3
CE
−3
CONDITIONS
= 6 V; f = 1 MHz
C
CB
BE
CE
= 5 mA
C
= 0
= 6 V; f = 1 MHz
E
= 0.1 mA
= 5 V
= 0.1 mA
10
−2
P
20
10
2.5

25


MIN.
10
t p
−1
T
Product specification
δ
BFG10W/X



100

3
2
=
t p (s)
MAX.
t p
T
t
MBG431
1
V
V
V
A
pF
pF
UNIT