BFG10W/X,115 NXP Semiconductors, BFG10W/X,115 Datasheet - Page 2

• Manufacturer Part Number: BFG10W/X,115
• Description: TRANS NPN 10V 250MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 1.9GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036590115; BFG10W/X T/R; BFG10W/X T/R

NXP Semiconductors
FEATURES
 High efficiency
 Small size discrete power amplifier
 900 MHz and 1.9 GHz operating
 Gold metallization ensures
APPLICATIONS
 Common emitter class-AB
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
1995 Sep 22
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
areas
excellent reliability.
operation in hand-held radio
equipment up to 1.9 GHz.
stg
j
CBO
CEO
EBO
tot
UHF power transistor
th j-s
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
MODE OF OPERATION
amb
= 25 C in a common-emitter test circuit.
PARAMETER
PARAMETER
p
p
= 10 ms
= 4.6 ms
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
PINNING
PIN
1
2
3
4
collector
emitter
base
emitter
(GHz)
1.9
0.9
0.9
f
DESCRIPTION
open emitter
open collector
up to T
open base
up to T
P
2
tot
= 400 mW
s
s
CONDITIONS
CONDITIONS
= 102 C; note 1
= 102 C; note 1;
V
(V)
3.6
6
6
CE
lfpage
(mW)
200
650
360
Marking code: T5.
P
L






65

MIN.
Fig.1 SOT343N.
VALUE
4
1
Top view
180
12.5
Product specification
(dB)
10
G
5
p
BFG10W/X
20
10
2.5
250
250
400
+150
175
MAX.
3
2
MBK523
UNIT
K/W
V
V
V
mA
mA
mW
C
C
50
50
50
(%)

UNIT
c