NESG3033M14-T3-A CEL, NESG3033M14-T3-A Datasheet - Page 6

• Manufacturer Part Number: NESG3033M14-T3-A
• Description: TRANS RF NPN 2GHZ 4.3V 35MA M14
• Manufacturer: CEL

Specifications of NESG3033M14-T3-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 0.85dB @ 2GHz
• Gain: 17.5dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-UMM Flat Lead
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
NEC Electronics (Europe) GmbH
California Eastern Laboratories, Inc.
Compound Semiconductor Devices Division
NEC Electronics Corporation
Taipei Branch Office
TEL: [phone]
TEL: [phone]
E-mail: [e-mail]
Hong Kong Head Office
Korea Branch Office
URL: http://www.ncsd.necel.com/
TEL: [phone]
TEL: [phone]
TEL: [phone]
FAX: [phone]
FAX: [phone]
http://www.eu.necel.com/
http://www.cel.com/
FAX: [phone]
FAX: [phone]
FAX: [phone]
NESG3033M14
0604