NESG3033M14-T3-A CEL, NESG3033M14-T3-A Datasheet - Page 2

• Manufacturer Part Number: NESG3033M14-T3-A
• Description: TRANS RF NPN 2GHZ 4.3V 35MA M14
• Manufacturer: CEL

Specifications of NESG3033M14-T3-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 0.85dB @ 2GHz
• Gain: 17.5dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-UMM Flat Lead
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

RECOMMENDED OPERATING RANGE (T
2
Input Power
Base Feedback Resister
Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the
ESD protection element is turned on when recommended range of motion in the above table is exceeded.
However, there is no influence of reliability, including deterioration.
Parameter
Symbol
P
R
in
b
Data Sheet PU10640EJ01V0DS
MIN.
−
−
A
= +25°C)
Bias
Choke
TYP.
R
−
−
b
MAX.
100
0
dBm
Unit
kΩ
NESG3033M14