NESG3033M14-T3-A CEL, NESG3033M14-T3-A Datasheet - Page 3

• Manufacturer Part Number: NESG3033M14-T3-A
• Description: TRANS RF NPN 2GHZ 4.3V 35MA M14
• Manufacturer: CEL

Specifications of NESG3033M14-T3-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 0.85dB @ 2GHz
• Gain: 17.5dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-UMM Flat Lead
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

ELECTRICAL CHARACTERISTICS (T
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MSG =
Parameter
220 to 380
S
S
21
12
FB
zL
MSG
Symbol
h
C
⏐S
P
FE
OIP
re
I
I
O (1 dB)
NF
G
CBO
EBO
21e
Note 1
Note 2
3
a
Note
⏐
3
2
µ
A
V
V
V
V
V
Z
V
Z
V
V
V
f = 2.0 GHz, Z
V
f = 2.0 GHz, Z
s, Duty Cycle ≤ 2%
Data Sheet PU10640EJ01V0DS
= +25°C)
S
S
CB
EB
CE
CE
CE
CE
CB
CE
CE
CE
= Z
= Z
= 1 V, I
= 5 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 3 V, I
= 3 V, I
Sopt
Sopt
, Z
, Z
E
C
C
C
C
C
E
C
C (set)
C (set)
Test Conditions
L
L
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
= 6 mA
= 15 mA, f = 2.0 GHz
= 6 mA, f = 2.0 GHz,
= 6 mA, f = 2.0 GHz,
= 15 mA, f = 2.0 GHz
= Z
= Z
S
S
= Z
= Z
= 20 mA,
= 20 mA,
Lopt
Lopt
Sopt
Sopt
, Z
, Z
L
L
= Z
= Z
Lopt
Lopt
MIN.
15.0
17.5
220
−
−
−
−
−
−
−
TYP.
17.5
0.60
17.5
0.15
20.5
12.5
24.0
300
−
−
NESG3033M14
MAX.
0.85
0.25
100
100
380
−
−
−
−
−
dBm
dBm
Unit
nA
nA
dB
dB
dB
pF
dB
−
3