BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG520W,115
• Description: TRANS NPN 6V 70MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030630115; BFG520W T/R; BFG520W T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
I
f = 900 MHz; V
C
(dB)
gain
gain
(dB)
= 5 mA; V
Fig.6
30
20
10
50
40
30
20
10
0
0
10
Fig.8
0
MSG
CE
G UM
MSG
Gain as a function of collector current;
typical values.
= 6 V.
CE
Gain as a function of frequency;
typical values.
= 6 V.
10
10
2
20
10
3
30
f (MHz)
G max
G
I
G max
UM
C
(mA)
MLB810
MLB812
10
Rev. 04 - 21 November 2007
40
4
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
I
(dB)
gain
C
gain
(dB)
= 20 mA; V
Fig.7
50
40
30
20
10
0
30
20
10
10
Fig.9
0
0
MSG
CE
G UM
MSG
CE
Gain as a function of collector current;
typical values.
= 6 V.
= 6 V.
Gain as a function of frequency;
typical values.
BFG520W; BFG520W/X
10
10
2
20
10
3
Product specification
30
f (MHz)
G max
G max
G
I
UM
C
MLB813
(mA)
MLB811
6 of 15
10
40
4